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GSFN11006

GSFN11006 Good-Ark Semiconductor

GSFN11006.pdf
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60.00A, 60
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+10.53 грн
10000+9.31 грн
Мінімальне замовлення: 5000 шт
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Технічний опис GSFN11006 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 60.00A, 60, Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Drain to Source Voltage (Vdss): 60 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PPAK (3.15x3.1), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 54W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Інші пропозиції GSFN11006

Фото Назва Виробник Інформація Доступність Ціна
GSFN11006 GSFN11006 Good-Ark Semiconductor GSFN11006.pdf Description: MOSFET, N-CH, SINGLE, 60.00A, 60
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GSFN11006 GSFN11006.pdf
GSFN11006
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 60.00A, 60
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.15x3.1)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 54W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.