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GSFN26010

GSFN26010 Good-Ark Semiconductor

GSFN26010.pdf
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25.00A, 10
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+11.99 грн
10000+10.74 грн
Мінімальне замовлення: 5000 шт
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Технічний опис GSFN26010 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 25.00A, 10, Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: 8-PPAK (3.1x3.05), Vgs(th) (Max) @ Id: 3.8V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 25A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).

Інші пропозиції GSFN26010

Фото Назва Виробник Інформація Доступність Ціна
GSFN26010 GSFN26010 Good-Ark Semiconductor GSFN26010.pdf Description: MOSFET, N-CH, SINGLE, 25.00A, 10
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GSFN26010 GSFN26010.pdf
GSFN26010
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 25.00A, 10
Input Capacitance (Ciss) (Max) @ Vds: 1355 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.