GSFN3908 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Відгуки про товар
Написати відгук
Технічний опис GSFN3908 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 30V,, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PPAK (3.1x3.05), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 35W (Tc), Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V, Current - Continuous Drain (Id) @ 25°C: 48A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Інші пропозиції GSFN3908 за ціною від 11.35 грн до 32.62 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
GSFN3908 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 48A, 30V, Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PPAK (3.1x3.05) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 35W (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V Current - Continuous Drain (Id) @ 25°C: 48A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
на замовлення 2880 шт: термін постачання 21-31 дні (днів) |
|
| GSFN3908 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET, N-CH, SINGLE, 48A, 30V,
Input Capacitance (Ciss) (Max) @ Vds: 1700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (3.1x3.05)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 35W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 16A, 10V
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
на замовлення 2880 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 10+ | 32.62 грн |
| 12+ | 27.15 грн |
| 25+ | 25.31 грн |
| 100+ | 19.00 грн |
| 250+ | 17.64 грн |
| 500+ | 14.93 грн |
| 1000+ | 11.35 грн |