Продукція > GOOD-ARK SEMICONDUCTOR > GSFP0380

GSFP0380 Good-Ark Semiconductor

Name: GSFP0380
Brand: Good-Ark Semiconductor
SKU: 21970312-3
Price: 44640 UAH
Availability: InStock

Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 80A, 30V,
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V
Power Dissipation (Max): 74W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PPAK (5.1x5.71)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V

на замовлення 6000 шт:

термін постачання 21-31 дні (днів)

Кількість	Ціна
3000+	14.88 грн
6000+	13.40 грн

Мінімальне замовлення: 3000

В кошику од. на суму грн.

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Технічний опис GSFP0380 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 80A, 30V,, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 80A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V, Power Dissipation (Max): 74W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PPAK (5.1x5.71), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V.

Інші пропозиції GSFP0380

Фото	Назва	Виробник	Інформація	Доступність	Ціна
	GSFP0380	Виробник : Good-Ark Semiconductor	Description: MOSFET, N-CH, SINGLE, 80A, 30V, Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 20A, 10V Power Dissipation (Max): 74W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PPAK (5.1x5.71) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 11.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1210 pF @ 25 V	товару немає в наявності	В кошику од. на суму грн.