GSFPR8504 Good-Ark Semiconductor


GSFPR8504.pdf
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
на замовлення 10000 шт:
термін постачання 21-31 дні (днів)
КількістьЦіна
5000+51.73 грн
10000+48.16 грн
Мінімальне замовлення: 5000 шт
В кошику  од. на суму  грн.
Відгуки про товар
Написати відгук

Технічний опис GSFPR8504 Good-Ark Semiconductor

Description: MOSFET, N-CH, SINGLE, 280.00A, 4, Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-PPAK (5.1x5.86), Vgs(th) (Max) @ Id: 2.9V @ 250µA, Power Dissipation (Max): 139W (Tc), Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V, Current - Continuous Drain (Id) @ 25°C: 280A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).

Інші пропозиції GSFPR8504

Фото Назва Виробник Інформація Доступність Ціна
GSFPR8504 GSFPR8504 Good-Ark Semiconductor GSFPR8504.pdf Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.
GSFPR8504 GSFPR8504.pdf
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 280.00A, 4
Input Capacitance (Ciss) (Max) @ Vds: 9040 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.9V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.85mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 280A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
товару немає в наявності
В кошику  од. на суму  грн.