GSFQ4701 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна |
|---|---|
| 3000+ | 14.04 грн |
| 6000+ | 12.64 грн |
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Технічний опис GSFQ4701 Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L, Operating Temperature: -55°C ~ 150°C (TJ), Configuration: N and P-Channel Complementary, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR), Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 250µA, FET Feature: Standard, Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V, Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V, Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc), Drain to Source Voltage (Vdss): 40V, Power - Max: 2.5W (Tc), Technology: MOSFET (Metal Oxide).
Інші пропозиції GSFQ4701 за ціною від 13.43 грн до 38.83 грн
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GSFQ4701 | Good-Ark Semiconductor |
Description: MOSFET, N+P, DUAL, 40V, SOP-8L Supplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 250µA FET Feature: Standard Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc) Drain to Source Voltage (Vdss): 40V Power - Max: 2.5W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: N and P-Channel Complementary Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
на замовлення 6000 шт: термін постачання 21-31 дні (днів) |
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| GSFQ4701 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: MOSFET, N+P, DUAL, 40V, SOP-8L
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 250µA
FET Feature: Standard
Gate Charge (Qg) (Max) @ Vgs: 5.6nC @ 4.5V, 16nC @ 4.5V
Rds On (Max) @ Id, Vgs: 32mOhm @ 5A, 10V, 40mOhm @ 4A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 800pF @ 15V, 1600pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc), 7.2A (Tc)
Drain to Source Voltage (Vdss): 40V
Power - Max: 2.5W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel Complementary
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
на замовлення 6000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 8+ | 38.83 грн |
| 10+ | 32.08 грн |
| 25+ | 29.94 грн |
| 100+ | 22.48 грн |
| 250+ | 20.88 грн |
| 500+ | 17.66 грн |
| 1000+ | 13.43 грн |