GSGP0R703 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 3+ | 118.82 грн |
| 10+ | 93.78 грн |
| 100+ | 72.93 грн |
| 500+ | 58.01 грн |
| 1000+ | 47.26 грн |
| 2000+ | 44.49 грн |
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Технічний опис GSGP0R703 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3, Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-PPAK (5.1x5.86), Vgs(th) (Max) @ Id: 2.3V @ 250µA, Power Dissipation (Max): 139W (Tc), Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 282A (Tc), FET Type: N-Channel, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide).
Інші пропозиції GSGP0R703
| Фото | Назва | Виробник | Інформація | Доступність | Ціна |
|---|---|---|---|---|---|
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GSGP0R703 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 282.00A, 3 Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PPAK (5.1x5.86) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 139W (Tc) Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 282A (Tc) FET Type: N-Channel Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| GSGP0R703 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
Description: MOSFET, N-CH, SINGLE, 282.00A, 3
Input Capacitance (Ciss) (Max) @ Vds: 9045 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Power Dissipation (Max): 139W (Tc)
Rds On (Max) @ Id, Vgs: 0.7mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 282A (Tc)
FET Type: N-Channel
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.