GSGP9R115 Good-Ark Semiconductor
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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Технічний опис GSGP9R115 Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 87.00A, 15, Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 150 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: 8-PPAK (5.1x5.86), Vgs(th) (Max) @ Id: 4.6V @ 250µA, Power Dissipation (Max): 142W (Tc), Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V, Current - Continuous Drain (Id) @ 25°C: 87A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN, Packaging: Tape & Reel (TR).
Інші пропозиції GSGP9R115 за ціною від 51.59 грн до 161.11 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||||
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GSGP9R115 | Good-Ark Semiconductor |
Description: MOSFET, N-CH, SINGLE, 87.00A, 15 Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: 8-PPAK (5.1x5.86) Vgs(th) (Max) @ Id: 4.6V @ 250µA Power Dissipation (Max): 142W (Tc) Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V Current - Continuous Drain (Id) @ 25°C: 87A (Tc) FET Type: N-Channel |
на замовлення 4582 шт: термін постачання 21-31 дні (днів) |
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| GSGP9R115 |
|
Виробник: Good-Ark Semiconductor
Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
Description: MOSFET, N-CH, SINGLE, 87.00A, 15
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 2808 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 8-PPAK (5.1x5.86)
Vgs(th) (Max) @ Id: 4.6V @ 250µA
Power Dissipation (Max): 142W (Tc)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 42A, 10V
Current - Continuous Drain (Id) @ 25°C: 87A (Tc)
FET Type: N-Channel
на замовлення 4582 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 161.11 грн |
| 10+ | 105.28 грн |
| 100+ | 75.05 грн |
| 500+ | 57.87 грн |
| 1000+ | 53.78 грн |
| 2000+ | 51.59 грн |