Технічний опис GSIB640N-M3/45 Vishay
Category: Flat single phase diode bridge rectif., Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A, Type of bridge rectifier: single-phase, Max. off-state voltage: 0.4kV, Load current: 6A, Max. forward impulse current: 180A, Version: flat, Case: GSIB-5S, Electrical mounting: THT, Leads: flat pin, Kind of package: tube, Max. forward voltage: 0.95V, Features of semiconductor devices: glass passivated, кількість в упаковці: 1 шт.
Інші пропозиції GSIB640N-M3/45
| Фото | Назва | Виробник | Інформація |
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Ціна без ПДВ |
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| GSIB640N-M3/45 | Виробник : VISHAY |
 Category: Flat single phase diode bridge rectif.Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated кількість в упаковці: 1 шт |
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GSIB640N-M3/45 | Виробник : Vishay General Semiconductor - Diodes Division |
Description: BRIDGE RECT 1P 400V 6A GSIB-5S Packaging: Tube Package / Case: 4-SIP, GSIB-5S Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: GSIB-5S Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 6 A Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
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| GSIB640N-M3/45 | Виробник : Vishay General Semiconductor |
Bridge Rectifiers 6A,400V,SINGLE INLINE BRIDGE |
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| GSIB640N-M3/45 | Виробник : VISHAY |
Category: Flat single phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 400V; If: 6A; Ifsm: 180A Type of bridge rectifier: single-phase Max. off-state voltage: 0.4kV Load current: 6A Max. forward impulse current: 180A Version: flat Case: GSIB-5S Electrical mounting: THT Leads: flat pin Kind of package: tube Max. forward voltage: 0.95V Features of semiconductor devices: glass passivated |
товар відсутній |