Технічний опис GT010N10TL Goford Semiconductor
Description: MOSFET N-CH 100V 370A 400W 1.35M, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 370A (Tc), Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V, Power Dissipation (Max): 400W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): 20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V.
Інші пропозиції GT010N10TL за ціною від 151.33 грн до 389.68 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||
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GT010N10TL | Goford Semiconductor |
 Description: MOSFET N-CH 100V 370A 400W 1.35MPackaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 370A (Tc) Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V Power Dissipation (Max): 400W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V |
на замовлення 1086 шт: термін постачання 21-31 дні (днів) |
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| GT010N10TL |
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Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
Description: MOSFET N-CH 100V 370A 400W 1.35M
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 370A (Tc)
Rds On (Max) @ Id, Vgs: 1.35mOhm @ 50A, 10V
Power Dissipation (Max): 400W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): 20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 184 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13166 pF @ 50 V
на замовлення 1086 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 1+ | 389.68 грн |
| 10+ | 250.17 грн |
| 100+ | 179.03 грн |
| 500+ | 151.33 грн |