GT011N03TLE Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET N-CH 30V 250A 300W 1.2m(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 53.64 грн |
Відгуки про товар
Написати відгук
Технічний опис GT011N03TLE Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2m(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V.
Інші пропозиції GT011N03TLE за ціною від 62.51 грн до 209.29 грн
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
GT011N03TLE | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 30V 250A 300W 1.2M( Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Supplier Device Package: TOLL-8L Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
|
||||||||||||
|
|
GT011N03TLE | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 30V 250A 300W 1.2M( Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Supplier Device Package: TOLL-8L Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250A (Tc) Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±18V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V |
товару немає в наявності |