GT011N03TLE Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2m(
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±18V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
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Технічний опис GT011N03TLE Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2m(, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 250A (Tc), Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V, Power Dissipation (Max): 300W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±18V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V.
Інші пропозиції GT011N03TLE за ціною від 60.18 грн до 201.48 грн
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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GT011N03TLE | Goford Semiconductor |
Description: MOSFET N-CH 30V 250A 300W 1.2M( Power Dissipation (Max): 300W (Tc) Current - Continuous Drain (Id) @ 25°C: 250A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Vgs(th) (Max) @ Id: 2.5V @ 250µA Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±18V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TOLL-8L Mounting Type: Surface Mount Package / Case: 8-PowerSFN Packaging: Cut Tape (CT) |
на замовлення 1990 шт: термін постачання 21-31 дні (днів) |
|
| GT011N03TLE |
|
Виробник: Goford Semiconductor
Description: MOSFET N-CH 30V 250A 300W 1.2M(
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 250A 300W 1.2M(
Power Dissipation (Max): 300W (Tc)
Current - Continuous Drain (Id) @ 25°C: 250A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 6278 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 98 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±18V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TOLL-8L
Mounting Type: Surface Mount
Package / Case: 8-PowerSFN
Packaging: Cut Tape (CT)
на замовлення 1990 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 201.48 грн |
| 10+ | 125.59 грн |
| 100+ | 86.31 грн |
| 500+ | 65.24 грн |
| 1000+ | 60.18 грн |