GT013N04TI Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 40V 220A TO-220
Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 90W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
| Кількість | Ціна |
|---|---|
| 3+ | 142.71 грн |
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Технічний опис GT013N04TI Goford Semiconductor
Description: MOSFET N-CH 40V 220A TO-220, Input Capacitance (Ciss) (Max) @ Vds: 3986 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: TO-220, Vgs(th) (Max) @ Id: 5V @ 250µA, Power Dissipation (Max): 90W (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 30A, 10V, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Tube.