GT016N10TL Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET N-CH 100V 362A TOLL-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 362A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V
Power Dissipation (Max): 450W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 114.54 грн |
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Технічний опис GT016N10TL Goford Semiconductor
Description: MOSFET N-CH 100V 362A TOLL-8, Packaging: Tape & Reel (TR), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Current - Continuous Drain (Id) @ 25°C: 362A (Tc), Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V, Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V, Package / Case: 8-PowerSFN, FET Type: N-Channel, Power Dissipation (Max): 450W (Tc), Drain to Source Voltage (Vdss): 100 V.
Інші пропозиції GT016N10TL за ціною від 146.17 грн до 359.98 грн
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GT016N10TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V Package / Case: 8-PowerSFN FET Type: N-Channel Power Dissipation (Max): 450W (Tc) Drain to Source Voltage (Vdss): 100 V |
на замовлення 1363 шт: термін постачання 21-31 дні (днів) |
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GT016N10TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 100V 362A TOLL-8 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Current - Continuous Drain (Id) @ 25°C: 362A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 15A, 10V Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10037 pF @ 50 V Package / Case: 8-PowerSFN FET Type: N-Channel Power Dissipation (Max): 450W (Tc) Drain to Source Voltage (Vdss): 100 V |
товару немає в наявності |