GT020N10TL Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,100V,300A,330W,TOLL-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V
Power Dissipation (Max): 330W
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 58.56 грн |
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Технічний опис GT020N10TL Goford Semiconductor
Description: MOSFET,N-CH,100V,300A,330W,TOLL-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 300A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V, Power Dissipation (Max): 330W, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V.
Інші пропозиції GT020N10TL за ціною від 84.86 грн до 235.38 грн
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GT020N10TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Cut Tape (CT) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V |
на замовлення 1740 шт: термін постачання 21-31 дні (днів) |
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GT020N10TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 100V 300A 330W 2.0M( Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 100A, 10V Power Dissipation (Max): 330W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): 20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10800 pF @ 50 V |
товару немає в наявності |