GT023N10M Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 100V 226A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 226A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V
| Кількість | Ціна |
|---|---|
| 800+ | 94.68 грн |
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Технічний опис GT023N10M Goford Semiconductor
Description: MOSFET N-CH 100V 226A TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 226A (Tc), Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V, Power Dissipation (Max): 250W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8050 pF @ 50 V.
Інші пропозиції GT023N10M за ціною від 113.26 грн до 113.26 грн
| Фото | Назва | Виробник | Інформація |
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GT023N10M | Виробник : Goford Semiconductor |
Description: N100V,140A,RD<2.7M@10V,VTH2.7V~4 Input Capacitance (Ciss) (Max) @ Vds: 8148 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 4.3V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 226A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT023N10M | Виробник : Goford Semiconductor |
Description: N100V,140A,RD<2.7M@10V,VTH2.7V~4 Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 4.3V @ 250µA Power Dissipation (Max): 250W (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 226A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Input Capacitance (Ciss) (Max) @ Vds: 8148 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 121 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Packaging: Cut Tape (CT) |
товару немає в наявності |