GT025N06AQ Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,60V,175A,220W,TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 175A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V
Power Dissipation (Max): 220W
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V
на замовлення 1500 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 1500+ | 69.24 грн |
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Технічний опис GT025N06AQ Goford Semiconductor
Description: MOSFET N-CH 60V 175A 220W 2.5M(M, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 175A (Tc), Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V, Power Dissipation (Max): 220W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V.
Інші пропозиції GT025N06AQ
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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GT025N06AQ | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 60V 175A 220W 2.5M(M Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 175A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 220W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5400 pF @ 30 V |
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