Технічний опис GT025N06AQ Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247, Type of transistor: N-MOSFET, Polarisation: unipolar, Drain-source voltage: 60V, Drain current: 175A, Power dissipation: 220W, Case: TO247, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 70nC, Kind of channel: enhancement, Technology: SGT.
Інші пропозиції GT025N06AQ
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
| GT025N06AQ | GOFORD SEMICONDUCTOR |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 175A Power dissipation: 220W Case: TO247 Gate-source voltage: ±20V Mounting: THT Gate charge: 70nC Kind of channel: enhancement Technology: SGT |
товару немає в наявності |
В кошику од. на суму грн. |
| GT025N06AQ |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 175A
Power dissipation: 220W
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 70nC
Kind of channel: enhancement
Technology: SGT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 175A; 220W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 175A
Power dissipation: 220W
Case: TO247
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 70nC
Kind of channel: enhancement
Technology: SGT
товару немає в наявності
В кошику
од. на суму грн.