GT035N10T Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V,190A,RD<3.5M@10V,VTH2.0V~4
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 190A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 10V
Power Dissipation (Max): 250W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6057 pF @ 50 V
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 266.50 грн |
| 50+ | 130.67 грн |
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Технічний опис GT035N10T Goford Semiconductor
Category: THT N channel transistors, Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W, Type of transistor: N-MOSFET, Technology: Trench, Polarisation: unipolar, Drain-source voltage: 100V, Drain current: 190A, Pulsed drain current: 760A, Power dissipation: 250W, Case: TO220, Gate-source voltage: ±20V, On-state resistance: 3.5mΩ, Mounting: THT, Gate charge: 68nC, Kind of channel: enhancement.
Інші пропозиції GT035N10T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
GT035N10T | GOFORD SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W Type of transistor: N-MOSFET Technology: Trench Polarisation: unipolar Drain-source voltage: 100V Drain current: 190A Pulsed drain current: 760A Power dissipation: 250W Case: TO220 Gate-source voltage: ±20V On-state resistance: 3.5mΩ Mounting: THT Gate charge: 68nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| GT035N10T |
|
Виробник: GOFORD SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 100V; 190A; Idm: 760A; 250W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 250W
Case: TO220
Gate-source voltage: ±20V
On-state resistance: 3.5mΩ
Mounting: THT
Gate charge: 68nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.