GT045N10Q Goford Semiconductor

Description: MOSFET,N-CH,100V,145A,208W,TO-24, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 145A (Tc), Rds On (Max) @ Id, Vgs: 4.5mOhm @ 30A, 10V, Power Dissipation (Max): 208W, Supplier Device Package: TO-247, Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5800 pF @ 50 V.