GT055N06M Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,60V,90A,78W,TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 8A, 10V
Power Dissipation (Max): 78W
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V, 4.5V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1170 pF @ 50 V
на замовлення 800 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 800+ | 22.36 грн |
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Технічний опис GT055N06M Goford Semiconductor
Description: MOSFET N-CH 60V 90A 78W TO-263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 90A (Tc), Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V, Power Dissipation (Max): 78W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: TO-263, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V.
Інші пропозиції GT055N06M за ціною від 66.28 грн до 108.81 грн
| Фото | Назва | Виробник | Інформація |
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GT055N06M | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V |
на замовлення 90 шт: термін постачання 21-31 дні (днів) |
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GT055N06M | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 60V 90A 78W TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 30A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 30 V |
товару немає в наявності |