GT070N15TL Goford Semiconductor
Виробник: Goford SemiconductorDescription: MOSFET,N-CH,150V,200A,430W,TOLL-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 25A, 10V
Power Dissipation (Max): 430W
Supplier Device Package: TOLL-8L
Drive Voltage (Max Rds On, Min Rds On): 10V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 15 V
на замовлення 2000 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна |
|---|---|
| 2000+ | 82.39 грн |
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Технічний опис GT070N15TL Goford Semiconductor
Description: MOSFET N-CH 150V,200A,430W TOLL-, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 200A (Tc), Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V, Power Dissipation (Max): 430W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TOLL-8L, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V.
Інші пропозиції GT070N15TL за ціною від 208.27 грн до 327.05 грн
| Фото | Назва | Виробник | Інформація |
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GT070N15TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V |
на замовлення 75 шт: термін постачання 21-31 дні (днів) |
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GT070N15TL | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 150V,200A,430W TOLL- Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 40A, 10V Power Dissipation (Max): 430W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TOLL-8L Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5865 pF @ 75 V |
товару немає в наявності |