GT1003A Goford Semiconductor
Виробник: Goford Semiconductor
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3.
Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.7W (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
| Кількість | Ціна |
|---|---|
| 10+ | 32.93 грн |
| 16+ | 19.33 грн |
| 100+ | 12.20 грн |
| 500+ | 8.55 грн |
| 1000+ | 7.61 грн |
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Технічний опис GT1003A Goford Semiconductor
Description: MOSFET N-CH 100V 3A SOT-23-3L, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.6W (Tc), Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції GT1003A
| Фото | Назва | Виробник | Інформація |
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GT1003A | Виробник : Goford Semiconductor |
Description: N100V, 3A,RD<140M@10V,VTH1.0V~3. Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.7W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 209 pF @ 50 V |
товару немає в наявності |
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GT1003A | Виробник : Goford Semiconductor |
Description: MOSFET N-CH 100V 3A SOT-23-3L Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.6W (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 3A, 10V Current - Continuous Drain (Id) @ 25°C: 3A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |