GT110N06D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET N-CH 60V 35A DFN3*3-8L
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 25W (Tc)
Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (3.15x3.05)
| Кількість | Ціна |
|---|---|
| 5000+ | 15.03 грн |
| 15000+ | 13.56 грн |
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Технічний опис GT110N06D3 Goford Semiconductor
Description: MOSFET N-CH 60V 35A DFN3*3-8L, Vgs(th) (Max) @ Id: 2.4V @ 250µA, Power Dissipation (Max): 25W (Tc), Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-DFN (3.15x3.05).
Інші пропозиції GT110N06D3 за ціною від 16.59 грн до 70.57 грн
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GT110N06D3 | Виробник : Goford Semiconductor |
Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V |
на замовлення 3727 шт: термін постачання 21-31 дні (днів) |
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GT110N06D3 | Виробник : Goford Semiconductor |
Description: N60V, 35A,RD<11M@10V,VTH1.0V~2.4 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 11mOhm @ 14A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1059 pF @ 30 V |
товару немає в наявності |
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| GT110N06D3 | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; SGT; unipolar; 60V; 35A; 25W; DFN3x3-8 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 25W Case: DFN3x3-8 Mounting: SMD Technology: SGT Drain-source voltage: 60V Drain current: 35A Gate charge: 24nC Gate-source voltage: ±20V Kind of channel: enhancement |
товару немає в наявності |