Технічний опис GT180P08T GOFORD Semiconductor
Category: THT P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220, Type of transistor: P-MOSFET, Technology: SGT, Polarisation: unipolar, Drain-source voltage: -80V, Drain current: -89A, Power dissipation: 245W, Case: TO220, Gate-source voltage: ±20V, Mounting: THT, Gate charge: 103nC, Kind of channel: enhancement.
Інші пропозиції GT180P08T
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
GT180P08T | GOFORD SEMICONDUCTOR |
Category: THT P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220 Type of transistor: P-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: -80V Drain current: -89A Power dissipation: 245W Case: TO220 Gate-source voltage: ±20V Mounting: THT Gate charge: 103nC Kind of channel: enhancement |
товару немає в наявності |
В кошику од. на суму грн. |
| GT180P08T |
Виробник: GOFORD SEMICONDUCTOR
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -89A
Power dissipation: 245W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -89A; 245W; TO220
Type of transistor: P-MOSFET
Technology: SGT
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -89A
Power dissipation: 245W
Case: TO220
Gate-source voltage: ±20V
Mounting: THT
Gate charge: 103nC
Kind of channel: enhancement
товару немає в наявності
В кошику
од. на суму грн.