GT400P10M Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 106W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
| Кількість | Ціна |
|---|---|
| 800+ | 44.43 грн |
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Технічний опис GT400P10M Goford Semiconductor
Description: MOSFET P-CH 100V 35A TO-263, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-263, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 106W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 35A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide).
Інші пропозиції GT400P10M за ціною від 60.70 грн до 121.54 грн
| Фото | Назва | Виробник | Інформація |
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GT400P10M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-263 Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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GT400P10M | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 100V 35A TO-263 Input Capacitance (Ciss) (Max) @ Vds: 3073 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-263 Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 106W (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
на замовлення 800 шт: термін постачання 21-31 дні (днів) |
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| GT400P10M | Виробник : GOFORD Semiconductor |
GT400P10M |
на замовлення 1600 шт: термін постачання 21-31 дні (днів) |
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| GT400P10M | Виробник : GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -100V; -35A; 106W; TO263 Case: TO263 Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Technology: SGT Polarisation: unipolar Drain-source voltage: -100V Drain current: -35A Gate charge: 46nC Power dissipation: 106W Gate-source voltage: ±20V |
товару немає в наявності |