GT6K2P10IH Goford Semiconductor
Виробник: Goford Semiconductor
Description: MOSFET P-CH 100V 1A SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 1A, 10V
Power Dissipation (Max): 1.4W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
| Кількість | Ціна |
|---|---|
| 3000+ | 3.14 грн |
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Технічний опис GT6K2P10IH Goford Semiconductor
Description: MOSFET P-CH 100V 1A SOT-23, Input Capacitance (Ciss) (Max) @ Vds: 253 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.4W (Tc), Rds On (Max) @ Id, Vgs: 670mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Інші пропозиції GT6K2P10IH за ціною від 8.69 грн до 23.52 грн
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GT6K2P10IH | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 100V 1A SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 253 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
на замовлення 206 шт: термін постачання 21-31 дні (днів) |
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GT6K2P10IH | Виробник : Goford Semiconductor |
Description: MOSFET P-CH 100V 1A SOT-23 Input Capacitance (Ciss) (Max) @ Vds: 253 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.4W (Tc) Rds On (Max) @ Id, Vgs: 670mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
товару немає в наявності |