GT700P08D3 Goford Semiconductor
Виробник: Goford Semiconductor
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
| Кількість | Ціна без ПДВ |
|---|---|
| 4+ | 81.18 грн |
| 10+ | 49.14 грн |
| 100+ | 32.25 грн |
| 500+ | 23.44 грн |
| 1000+ | 21.24 грн |
| 2000+ | 19.39 грн |
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Технічний опис GT700P08D3 Goford Semiconductor
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8, Case: DFN3x3-8, Mounting: SMD, Power dissipation: 69W, Gate charge: 75nC, Polarisation: unipolar, Technology: SGT, Drain current: -16A, Kind of channel: enhancement, Drain-source voltage: -80V, Type of transistor: P-MOSFET, Gate-source voltage: ±20V.
Інші пропозиції GT700P08D3
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
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GT700P08D3 | Goford Semiconductor |
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH- Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: 8-DFN (3.15x3.05) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V |
товару немає в наявності |
Мінімальне замовлення: 5000 шт В кошику од. на суму грн. |
| GT700P08D3 | GOFORD SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8 Case: DFN3x3-8 Mounting: SMD Power dissipation: 69W Gate charge: 75nC Polarisation: unipolar Technology: SGT Drain current: -16A Kind of channel: enhancement Drain-source voltage: -80V Type of transistor: P-MOSFET Gate-source voltage: ±20V |
товару немає в наявності |
В кошику од. на суму грн. |
| GT700P08D3 |
|
Виробник: Goford Semiconductor
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
Description: P-80V,-16A,RD(MAX)<75M@-10V,VTH-
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 75mOhm @ 2A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: 8-DFN (3.15x3.05)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1591 pF @ 40 V
товару немає в наявності
Мінімальне замовлення: 5000 шт
В кошику
од. на суму грн.
| GT700P08D3 |
|
Виробник: GOFORD SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8
Case: DFN3x3-8
Mounting: SMD
Power dissipation: 69W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; SGT; unipolar; -80V; -16A; 69W; DFN3x3-8
Case: DFN3x3-8
Mounting: SMD
Power dissipation: 69W
Gate charge: 75nC
Polarisation: unipolar
Technology: SGT
Drain current: -16A
Kind of channel: enhancement
Drain-source voltage: -80V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
товару немає в наявності
В кошику
од. на суму грн.