GT700P08T Goford Semiconductor

Виробник: Goford Semiconductor
Description: P-80V, -25A,RD<72M@-10V,VTH-2V~-
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 72mOhm @ 2A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Operating Temperature: -55°C ~ 150°C (TJ)
Input Capacitance (Ciss) (Max) @ Vds: 1639 pF @ 40 V