GURB5H60HE3/45 Vishay General Semiconductor - Diodes Division
Виробник: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A TO263AB
Current - Reverse Leakage @ Vr: 20 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 5A
Technology: Standard
Reverse Recovery Time (trr): 30 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Технічний опис GURB5H60HE3/45 Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 5A TO263AB, Current - Reverse Leakage @ Vr: 20 µA @ 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 5 A, Voltage - DC Reverse (Vr) (Max): 600 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-263AB (D2PAK), Current - Average Rectified (Io): 5A, Technology: Standard, Reverse Recovery Time (trr): 30 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.
Інші пропозиції GURB5H60HE3/45
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
GURB5H60HE3/45 | Виробник : Vishay Semiconductors |
Rectifiers 600 Volt 5.0A 30ns Glass Passivated |
товару немає в наявності |