GV810_R1_00001 Panjit International Inc.
Виробник: Panjit International Inc.
Description: DIODE GEN PURP 1KV 8A TO277
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277
Current - Average Rectified (Io): 8A
Capacitance @ Vr, F: 55pF @ 4V, 1MHz
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Tape & Reel (TR)
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Технічний опис GV810_R1_00001 Panjit International Inc.
Description: DIODE GEN PURP 1KV 8A TO277, Current - Reverse Leakage @ Vr: 5 µA @ 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A, Voltage - DC Reverse (Vr) (Max): 1000 V, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: TO-277, Current - Average Rectified (Io): 8A, Capacitance @ Vr, F: 55pF @ 4V, 1MHz, Technology: Standard, Speed: Standard Recovery >500ns, > 200mA (Io), Mounting Type: Surface Mount, Package / Case: TO-277, 3-PowerDFN, Packaging: Tape & Reel (TR).
Інші пропозиції GV810_R1_00001
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GV810_R1_00001 | Виробник : Panjit International Inc. |
Description: DIODE GEN PURP 1KV 8A TO277 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Capacitance @ Vr, F: 55pF @ 4V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
товару немає в наявності |
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GV810_R1_00001 | Виробник : Panjit |
Rectifiers 1000V,General Purpose Rectifiers,TO-277,8A |
товару немає в наявності |