H7N1002LS-E Renesas Electronics America Inc
Виробник: Renesas Electronics America Inc
Description: MOSFET N-CH 100V 75A 4LDPAK
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-83
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: LDPAK
Power Dissipation (Max): 100W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 37.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Ta)
FET Type: N-Channel
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Технічний опис H7N1002LS-E Renesas Electronics America Inc
Description: MOSFET N-CH 100V 75A 4LDPAK, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-83, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 9700 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: LDPAK, Power Dissipation (Max): 100W (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 37.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 75A (Ta), FET Type: N-Channel.
Інші пропозиції H7N1002LS-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| H7N1002LS-E | Виробник : Renesas Electronics |
MOSFET N-Channel MOSFET - LDPAK(S)-(1) |
товару немає в наявності |