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HAT1096C-EL-E Renesas

r07ds1175ej0500_hat1096c.pdf Виробник: Renesas
Description: HAT1096C - P-CHANNEL POWER MOSFE
Packaging: Bulk
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 293mOhm @ 500µA, 4.5V
Power Dissipation (Max): 790mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 1mA
Supplier Device Package: 6-CMFPAK
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V
на замовлення 9000 шт:
термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
1343+14.49 грн
Мінімальне замовлення: 1343
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Технічний опис HAT1096C-EL-E Renesas

Description: HAT1096C - P-CHANNEL POWER MOSFE, Packaging: Bulk, Package / Case: 6-SMD, Flat Leads, Mounting Type: Surface Mount, Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), Rds On (Max) @ Id, Vgs: 293mOhm @ 500µA, 4.5V, Power Dissipation (Max): 790mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 1mA, Supplier Device Package: 6-CMFPAK, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 10 V.