Технічний опис HAT2038R-EL-E RENESAS
Description: MOSFET 2N-CH 60V 5A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.2V @ 1mA, FET Feature: Logic Level Gate, Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 5A, Drain to Source Voltage (Vdss): 60V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції HAT2038R-EL-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
|
HAT2038R-EL-E | Renesas Electronics Corporation |
Description: MOSFET 2N-CH 60V 5A 8SOPSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.2V @ 1mA FET Feature: Logic Level Gate Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V Current - Continuous Drain (Id) @ 25°C: 5A Drain to Source Voltage (Vdss): 60V Power - Max: 3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
| HAT2038R-EL-E |
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Виробник: Renesas Electronics Corporation
Description: MOSFET 2N-CH 60V 5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 5A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.2V @ 1mA
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 58mOhm @ 3A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 520pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 5A
Drain to Source Voltage (Vdss): 60V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.



