| Кількість | Ціна без ПДВ |
|---|---|
| 11+ | 70.03 грн |
| 25+ | 69.00 грн |
| 50+ | 65.56 грн |
| 100+ | 59.79 грн |
| 250+ | 56.52 грн |
| 500+ | 55.64 грн |
| 1000+ | 54.76 грн |
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Технічний опис HAT2092R-EL-E Renesas
Description: MOSFET 2N-CH 30V 11A 8SOP, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, FET Feature: Logic Level Gate, Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V, Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V, Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V, Current - Continuous Drain (Id) @ 25°C: 11A, Drain to Source Voltage (Vdss): 30V, Power - Max: 3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Інші пропозиції HAT2092R-EL-E
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
HAT2092R-EL-E | Renesas Electronics Corporation |
 Description: MOSFET 2N-CH 30V 11A 8SOPSupplier Device Package: 8-SOP Vgs(th) (Max) @ Id: 2.5V @ 1mA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V Current - Continuous Drain (Id) @ 25°C: 11A Drain to Source Voltage (Vdss): 30V Power - Max: 3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
HAT2092R-EL-E | Renesas Electronics |
MOSFET MOSFET - 30V SO-8 - Lead Free |
товару немає в наявності |
Мінімальне замовлення: 2500 шт В кошику од. на суму грн. |
| HAT2092R-EL-E |
|
Виробник: Renesas Electronics Corporation
Description: MOSFET 2N-CH 30V 11A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11A 8SOP
Supplier Device Package: 8-SOP
Vgs(th) (Max) @ Id: 2.5V @ 1mA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 22nC @ 10V
Rds On (Max) @ Id, Vgs: 16mOhm @ 5.5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1400pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 11A
Drain to Source Voltage (Vdss): 30V
Power - Max: 3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
товару немає в наявності
В кошику
од. на суму грн.
| HAT2092R-EL-E |
|
Виробник: Renesas Electronics
MOSFET MOSFET - 30V SO-8 - Lead Free
MOSFET MOSFET - 30V SO-8 - Lead Free
товару немає в наявності
Мінімальне замовлення: 2500 шт
В кошику
од. на суму грн.