Технічний опис HAT2114RJ-EL-E RENESAS
Description: NCH POWER MOSFET 60V 6A 32MOHM S, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 2W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 6A, Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V, Rds On (Max) @ Id, Vgs: 40Ohm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: 8-SOP.
Інші пропозиції HAT2114RJ-EL-E
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
| HAT2114RJ-EL-E | Виробник : RENESAS |
 SOP8 |
на замовлення 242 шт: термін постачання 14-28 дні (днів) |
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HAT2114RJ-EL-E | Виробник : Renesas Electronics Corporation |
Description: NCH POWER MOSFET 60V 6A 32MOHM S Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C Technology: MOSFET (Metal Oxide) Power - Max: 2W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 6A Input Capacitance (Ciss) (Max) @ Vds: 1000pF @ 10V Rds On (Max) @ Id, Vgs: 40Ohm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: 8-SOP |
товару немає в наявності |