HAT2195R-EL-E Renesas

Description: HAT2195R - N Channel MOSFET High, Input Capacitance (Ciss) (Max) @ Vds: 3400 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: 8-SOP, Vgs(th) (Max) @ Id: 2.5V @ 1mA, Power Dissipation (Max): 2.5W, Rds On (Max) @ Id, Vgs: 5.8mOhm @ 9A, 10V, Current - Continuous Drain (Id) @ 25°C: 18A, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C, Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Bulk.