HDBL102GH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor Corporation
Description: 50NS, 1A, 100V, HIGH EFFICIENT R
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Average Rectified (Io): 1 A
Voltage - Peak Reverse (Max): 100 V
Grade: Automotive
Supplier Device Package: DBL
Technology: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Diode Type: Single Phase
Mounting Type: Through Hole
Package / Case: 4-DIP (0.300", 7.62mm)
Packaging: Tube
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Технічний опис HDBL102GH Taiwan Semiconductor Corporation
Description: 50NS, 1A, 100V, HIGH EFFICIENT R, Qualification: AEC-Q101, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Average Rectified (Io): 1 A, Voltage - Peak Reverse (Max): 100 V, Grade: Automotive, Supplier Device Package: DBL, Technology: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Diode Type: Single Phase, Mounting Type: Through Hole, Package / Case: 4-DIP (0.300", 7.62mm), Packaging: Tube.
Інші пропозиції HDBL102GH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
 |
HDBL102GH | Taiwan Semiconductor |
Bridge Rectifiers 50ns, 1A, 100V, High Efficient Recovery Bridge Rectifier |
товару немає в наявності |
В кошику од. на суму грн. |
| HDBL102GH |
|
Виробник: Taiwan Semiconductor
Bridge Rectifiers 50ns, 1A, 100V, High Efficient Recovery Bridge Rectifier
Bridge Rectifiers 50ns, 1A, 100V, High Efficient Recovery Bridge Rectifier
товару немає в наявності
В кошику
од. на суму грн.