HDBL102GH Taiwan Semiconductor Corporation
Виробник: Taiwan Semiconductor CorporationDescription: 50NS, 1A, 100V, HIGH EFFICIENT R
Packaging: Tube
Package / Case: 4-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: DBL
Grade: Automotive
Voltage - Peak Reverse (Max): 100 V
Current - Average Rectified (Io): 1 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Qualification: AEC-Q101
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Технічний опис HDBL102GH Taiwan Semiconductor Corporation
Description: 50NS, 1A, 100V, HIGH EFFICIENT R, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Diode Type: Single Phase, Operating Temperature: -55°C ~ 150°C (TJ), Technology: Standard, Supplier Device Package: DBL, Grade: Automotive, Voltage - Peak Reverse (Max): 100 V, Current - Average Rectified (Io): 1 A, Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A, Current - Reverse Leakage @ Vr: 5 µA @ 100 V, Qualification: AEC-Q101.
Інші пропозиції HDBL102GH
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
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HDBL102GH | Виробник : Taiwan Semiconductor |
Bridge Rectifiers 50ns, 1A, 100V, High Efficient Recovery Bridge Rectifier |
товару немає в наявності |