Технічний опис HER3003PT Taiwan Semiconductor
Description: DIODE GEN PURP 30A 200V TO3P, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 50 ns, Technology: Standard, Diode Configuration: 1 Pair Common Cathode, Current - Average Rectified (Io) (per Diode): 30A (DC), Supplier Device Package: TO-247AD (TO-3P), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 200 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A, Current - Reverse Leakage @ Vr: 10 µA @ 200 V.
Інші пропозиції HER3003PT
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HER3003PT | Виробник : Taiwan Semiconductor Corporation |
Description: DIODE GEN PURP 30A 200V TO3P Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 30A (DC) Supplier Device Package: TO-247AD (TO-3P) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 15 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
товару немає в наявності |
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HER3003PT | Виробник : Taiwan Semiconductor | Rectifiers 50ns, 30A, 200V, High Efficient Recovery Rectifier |
товару немає в наявності |