HER306G-K Taiwan Semiconductor Corporation

Description: 75NS, 3A, 600V, HIGH EFFICIENT R, Packaging: Tape & Reel (TR), Package / Case: DO-201AD, Axial, Mounting Type: Through Hole, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 75 ns, Technology: Standard, Capacitance @ Vr, F: 35pF @ 4V, 1MHz, Current - Average Rectified (Io): 3A, Supplier Device Package: DO-201AD, Operating Temperature - Junction: -55°C ~ 150°C, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 3 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.