Технічний опис HER602G Yangjie Electronic Technology
Description: DIODE GEN PURP 100V 6A R-6, Mounting Type: Through Hole, Package / Case: R-6, Axial, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard, Reverse Recovery Time (trr): 50 ns, Current - Reverse Leakage @ Vr: 10 µA @ 100 V, Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 100 V, Part Status: Active, Packaging: Tape & Reel (TR), Speed: Fast Recovery =< 500ns, > 200mA (Io).
Інші пропозиції HER602G
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
HER602G | Taiwan Semiconductor Corporation |
 Description: DIODE GEN PURP 100V 6A R-6Mounting Type: Through Hole Package / Case: R-6, Axial Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: R-6 Current - Average Rectified (Io): 6A Capacitance @ Vr, F: 80pF @ 4V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Current - Reverse Leakage @ Vr: 10 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A Voltage - DC Reverse (Vr) (Max): 100 V Part Status: Active Packaging: Tape & Reel (TR) Speed: Fast Recovery =< 500ns, > 200mA (Io) |
товару немає в наявності |
В кошику од. на суму грн. |
 |
HER602G | Taiwan Semiconductor |
Rectifiers 6.0 Amp 100 Volt 150 Amp IFSM |
товару немає в наявності |
В кошику од. на суму грн. |
| HER602G |
|
Виробник: Taiwan Semiconductor Corporation
Description: DIODE GEN PURP 100V 6A R-6
Mounting Type: Through Hole
Package / Case: R-6, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 100V 6A R-6
Mounting Type: Through Hole
Package / Case: R-6, Axial
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: R-6
Current - Average Rectified (Io): 6A
Capacitance @ Vr, F: 80pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Current - Reverse Leakage @ Vr: 10 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 6 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Packaging: Tape & Reel (TR)
Speed: Fast Recovery =< 500ns, > 200mA (Io)
товару немає в наявності
В кошику
од. на суму грн.
| HER602G |
|
Виробник: Taiwan Semiconductor
Rectifiers 6.0 Amp 100 Volt 150 Amp IFSM
Rectifiers 6.0 Amp 100 Volt 150 Amp IFSM
товару немає в наявності
В кошику
од. на суму грн.