HER605G A0G Taiwan Semiconductor Corporation

Description: DIODE GEN PURP 400V 6A R-6, Reverse Recovery Time (trr): 50 ns, Speed: Fast Recovery =< 500ns, > 200mA (Io), Mounting Type: Through Hole, Package / Case: R-6, Axial, Packaging: Tape & Box (TB), Current - Reverse Leakage @ Vr: 10 µA @ 400 V, Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 6 A, Voltage - DC Reverse (Vr) (Max): 400 V, Part Status: Active, Operating Temperature - Junction: -55°C ~ 150°C, Supplier Device Package: R-6, Current - Average Rectified (Io): 6A, Capacitance @ Vr, F: 80pF @ 4V, 1MHz, Technology: Standard.