Технічний опис HFA04SD60S IR
Description: DIODE GEN PURP 600V 4A DPAK, Packaging: Tube, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 42 ns, Technology: Standard, Current - Average Rectified (Io): 4A, Supplier Device Package: D-PAK (TO-252AA), Operating Temperature - Junction: -55°C ~ 150°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 600 V, Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A, Current - Reverse Leakage @ Vr: 3 µA @ 600 V.
Інші пропозиції HFA04SD60S
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| HFA04SD60S | Виробник : IR |
 TO-252 |
на замовлення 7500 шт: термін постачання 14-28 дні (днів) |
||
 |
HFA04SD60S | Виробник : Vishay General Semiconductor - Diodes Division |
Description: DIODE GEN PURP 600V 4A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 42 ns Technology: Standard Current - Average Rectified (Io): 4A Supplier Device Package: D-PAK (TO-252AA) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 4 A Current - Reverse Leakage @ Vr: 3 µA @ 600 V |
товар відсутній |