HGT1S10N120BNS
Код товару: 104642
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УКТЗЕД: 8541 29 00 10
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Інші пропозиції HGT1S10N120BNS
| Фото | Назва | Виробник | Інформація | Доступність | Ціна без ПДВ |
|---|---|---|---|---|---|
 |
HGT1S10N120BNS | onsemi |
Description: IGBT NPT 1200V 35A TO-263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: NPT Td (on/off) @ 25°C: 23ns/165ns Switching Energy: 320µJ (on), 800µJ (off) Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
товару немає в наявності |
В кошику од. на суму грн. |
 |
HGT1S10N120BNS | onsemi / Fairchild |
IGBT Transistors 35A 1200V NPT N-Ch |
товару немає в наявності |
В кошику од. на суму грн. |
| HGT1S10N120BNS |
|
Виробник: onsemi
Description: IGBT NPT 1200V 35A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
Description: IGBT NPT 1200V 35A TO-263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
товару немає в наявності
В кошику
од. на суму грн.
| HGT1S10N120BNS |
|
Виробник: onsemi / Fairchild
IGBT Transistors 35A 1200V NPT N-Ch
IGBT Transistors 35A 1200V NPT N-Ch
товару немає в наявності
В кошику
од. на суму грн.