HGT1S10N120BNST onsemi
Виробник: onsemiDescription: IGBT 1200V 35A 298W TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/165ns
Switching Energy: 320µJ (on), 800µJ (off)
Test Condition: 960V, 10A, 10Ohm, 15V
Gate Charge: 100 nC
Part Status: Active
Current - Collector (Ic) (Max): 35 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 298 W
на замовлення 690 шт:
термін постачання 21-31 дні (днів)
| Кількість | Ціна без ПДВ |
|---|---|
| 2+ | 273.02 грн |
| 10+ | 220.8 грн |
| 100+ | 178.59 грн |
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Технічний опис HGT1S10N120BNST onsemi
Description: IGBT 1200V 35A 298W TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A, Supplier Device Package: TO-263 (D2Pak), IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/165ns, Switching Energy: 320µJ (on), 800µJ (off), Test Condition: 960V, 10A, 10Ohm, 15V, Gate Charge: 100 nC, Part Status: Active, Current - Collector (Ic) (Max): 35 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 80 A, Power - Max: 298 W.
Інші пропозиції HGT1S10N120BNST за ціною від 132.52 грн до 299.12 грн
| Фото | Назва | Виробник | Інформація |
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HGT1S10N120BNST | Виробник : onsemi / Fairchild |
IGBT Transistors N-Channel IGBT NPT Series 1200V |
на замовлення 56000 шт: термін постачання 752-761 дні (днів) |
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HGT1S10N120BNST | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R |
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HGT1S10N120BNST | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 35A 298000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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HGT1S10N120BNST | Виробник : onsemi |
Description: IGBT 1200V 35A 298W TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) IGBT Type: NPT Td (on/off) @ 25°C: 23ns/165ns Switching Energy: 320µJ (on), 800µJ (off) Test Condition: 960V, 10A, 10Ohm, 15V Gate Charge: 100 nC Part Status: Active Current - Collector (Ic) (Max): 35 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 298 W |
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HGT1S10N120BNST | Виробник : ONSEMI |
Category: SMD IGBT transistors Description: Transistor: IGBT; 1.2kV; 17A; 298W; D2PAK Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 17A Power dissipation: 298W Case: D2PAK Gate-emitter voltage: ±20V Pulsed collector current: 80A Mounting: SMD Gate charge: 150nC Kind of package: reel; tape |
товар відсутній |