Технічний опис HGT1S12N60A4S9A FAIRCHILD
Description: IGBT 600V 54A 167W TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 17ns/96ns, Switching Energy: 55µJ (on), 50µJ (off), Test Condition: 390V, 12A, 10Ohm, 15V, Gate Charge: 78 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 96 A, Power - Max: 167 W.
Інші пропозиції HGT1S12N60A4S9A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
|---|---|---|---|---|---|
| HGT1S12N60A4S9A | Виробник : FAIRCHILD |
 07+ TO-263 |
на замовлення 21000 шт: термін постачання 14-28 дні (днів) |
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HGT1S12N60A4S9A | Виробник : ON Semiconductor |
Trans IGBT Chip N-CH 600V 54A 167000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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HGT1S12N60A4S9A | Виробник : onsemi |
Description: IGBT 600V 54A 167W TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 17ns/96ns Switching Energy: 55µJ (on), 50µJ (off) Test Condition: 390V, 12A, 10Ohm, 15V Gate Charge: 78 nC Part Status: Obsolete Current - Collector (Ic) (Max): 54 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 96 A Power - Max: 167 W |
товар відсутній |