Технічний опис HGT1S20N60C3S9A Fairchild
Description: IGBT 600V 45A TO263AB, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A, Supplier Device Package: TO-263 (D2Pak), Td (on/off) @ 25°C: 28ns/151ns, Switching Energy: 295µJ (on), 500µJ (off), Test Condition: 480V, 20A, 10Ohm, 15V, Gate Charge: 91 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 45 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 300 A, Power - Max: 164 W.
Інші пропозиції HGT1S20N60C3S9A
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна без ПДВ |
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HGT1S20N60C3S9A | Виробник : ON Semiconductor |
 Trans IGBT Chip N-CH 600V 45A 164000mW 3-Pin(2+Tab) D2PAK T/R |
товар відсутній |
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HGT1S20N60C3S9A | Виробник : onsemi |
Description: IGBT 600V 45A TO263AB Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 20A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 28ns/151ns Switching Energy: 295µJ (on), 500µJ (off) Test Condition: 480V, 20A, 10Ohm, 15V Gate Charge: 91 nC Part Status: Obsolete Current - Collector (Ic) (Max): 45 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 300 A Power - Max: 164 W |
товар відсутній |
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HGT1S20N60C3S9A | Виробник : ON Semiconductor / Fairchild |
IGBT Transistors 45a 600V N-Ch IGBT UFS Series |
товар відсутній |