HGTD8P50G1 Harris Corporation
Виробник: Harris Corporation
Description: 8A, 500V P-CHANNEL IGBT
Power - Max: 66 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 30 nC
Supplier Device Package: I-PAK
Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 8A
Input Type: Standard
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 212+ | 112.35 грн |
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Технічний опис HGTD8P50G1 Harris Corporation
Description: 8A, 500V P-CHANNEL IGBT, Power - Max: 66 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Current - Collector (Ic) (Max): 12 A, Part Status: Active, Gate Charge: 30 nC, Supplier Device Package: I-PAK, Vce(on) (Max) @ Vge, Ic: 3.7V @ 15V, 8A, Input Type: Standard, Operating Temperature: -40°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Packaging: Bulk.