HGTD8P50G1S Harris Corporation
Виробник: Harris Corporation
Description: 8A, 500V P-CHANNEL IGBT
Power - Max: 66 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 500 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 30 nC
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Bulk
| Кількість | Ціна |
|---|---|
| 381+ | 59.28 грн |
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Технічний опис HGTD8P50G1S Harris Corporation
Description: 8A, 500V P-CHANNEL IGBT, Power - Max: 66 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 500 V, Current - Collector (Ic) (Max): 12 A, Part Status: Active, Gate Charge: 30 nC, Supplier Device Package: TO-252AA, Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 3A, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Packaging: Bulk.