HGTG18N120BN onsemi
Виробник: onsemiDescription: IGBT NPT 1200V 54A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A
Supplier Device Package: TO-247-3
IGBT Type: NPT
Td (on/off) @ 25°C: 23ns/170ns
Switching Energy: 800µJ (on), 1.8mJ (off)
Test Condition: 960V, 18A, 3Ohm, 15V
Gate Charge: 165 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 165 A
Power - Max: 390 W
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Технічний опис HGTG18N120BN onsemi
Description: IGBT NPT 1200V 54A TO-247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 18A, Supplier Device Package: TO-247-3, IGBT Type: NPT, Td (on/off) @ 25°C: 23ns/170ns, Switching Energy: 800µJ (on), 1.8mJ (off), Test Condition: 960V, 18A, 3Ohm, 15V, Gate Charge: 165 nC, Current - Collector (Ic) (Max): 54 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 165 A, Power - Max: 390 W.
Інші пропозиції HGTG18N120BN
| Фото | Назва | Виробник | Інформація |
Доступність |
Ціна |
|---|---|---|---|---|---|
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HGTG18N120BN | Виробник : onsemi / Fairchild |
IGBT Transistors 54A 1200V N-Ch |
товару немає в наявності |