HGTP10N40F1D

HGTP10N40F1D Harris Corporation


HRISD027-3-25.pdf?t.download=true&u=5oefqw Виробник: Harris Corporation
Description: 12A, 400V, N-CHANNEL IGBT
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A
Supplier Device Package: TO-220
Gate Charge: 13.4 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector Pulsed (Icm): 12 A
Power - Max: 75 W
на замовлення 806 шт:

термін постачання 21-31 дні (днів)
Кількість Ціна без ПДВ
314+63.86 грн
Мінімальне замовлення: 314
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Технічний опис HGTP10N40F1D Harris Corporation

Description: 12A, 400V, N-CHANNEL IGBT, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.5V @ 10V, 5A, Supplier Device Package: TO-220, Gate Charge: 13.4 nC, Part Status: Active, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 400 V, Current - Collector Pulsed (Icm): 12 A, Power - Max: 75 W.