Технічний опис HGTP7N60A4-F102 ON Semiconductor
Description: IGBT 600V 34A TO-220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A, Supplier Device Package: TO-220-3, Td (on/off) @ 25°C: 11ns/100ns, Switching Energy: 55µJ (on), 150µJ (off), Test Condition: 390V, 7A, 25Ohm, 15V, Gate Charge: 60 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 34 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 56 A, Power - Max: 125 W.
Інші пропозиції HGTP7N60A4-F102
Фото | Назва | Виробник | Інформація |
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HGTP7N60A4-F102 | Виробник : onsemi |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 7A Supplier Device Package: TO-220-3 Td (on/off) @ 25°C: 11ns/100ns Switching Energy: 55µJ (on), 150µJ (off) Test Condition: 390V, 7A, 25Ohm, 15V Gate Charge: 60 nC Part Status: Obsolete Current - Collector (Ic) (Max): 34 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 56 A Power - Max: 125 W |
товару немає в наявності |
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HGTP7N60A4-F102 | Виробник : onsemi / Fairchild |
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товару немає в наявності |